IDH09G65C5XKSA2
DIODE SIL CARB 650V 9A TO220-2-1Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDH09G65C5XKSA2 is a 650V, 9A Silicon Carbide (SiC) Schottky diode. This component features a forward voltage (Vf) of 1.7V at 9A and a reverse leakage current of 160 µA at 650V. The device exhibits an exceptionally fast switching characteristic with no discernible reverse recovery time above 500mA (Io). Capacitance at 1V and 1MHz is specified at 270pF. Designed for operation across a junction temperature range of -55°C to 175°C, it is housed in a PG-TO220-2-1 package, facilitating through-hole mounting. This SiC diode is suitable for applications in power electronics, including renewable energy systems and industrial power supplies, where high efficiency and performance are critical.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 270pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 9 A |
| Current - Reverse Leakage @ Vr | 160 µA @ 650 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
