IDH08SG60CXKSA1
DIODE SIL CARB 600V 8A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH08SG60CXKSA1 is a 600V, 8A Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component, housed in a PG-TO220-2-2 package, offers a forward voltage (Vf) of 2.1V at 8A and a reverse leakage of 70 µA at 600V. Notably, it exhibits zero reverse recovery time (trr) with no recovery time exceeding 500mA (Io). The diode features a junction operating temperature range of -55°C to 175°C and a capacitance of 240pF at 1V, 1MHz. Its advanced Silicon Carbide technology makes it suitable for use in power supply units, industrial motor drives, and electric vehicle charging systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 240pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 70 µA @ 600 V |
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