IDH08S60CAKSA1
DIODE SIL CARB 600V 8A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDH08S60CAKSA1, is a 600V Silicon Carbide Schottky diode. This component offers an average rectified current (Io) of 8A and a maximum forward voltage (Vf) of 1.7V at 8A. It features a reverse leakage current of 100 µA at 600V and a junction operating temperature range of -55°C to 175°C. The diode exhibits zero reverse recovery time (trr) for currents above 500mA (Io), indicating superior switching performance. Packaged in a PG-TO220-2-2 through-hole configuration, this device is commonly employed in power supply units, electric vehicle charging, and industrial motor control applications. Its 310pF capacitance at 1V (1MHz) is also a relevant parameter for high-frequency circuit design.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
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