IDH08S120AKSA1
DIODE SIC 1.2KV 7.5A TO220Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH08S120AKSA1 is a 1200 V Silicon Carbide Schottky diode with a 7.5 A average rectified current rating. This device features a low forward voltage of 1.8 V at 7.5 A and a remarkably low reverse leakage current of 180 µA at 1200 V. The IDH08S120AKSA1 exhibits no reverse recovery time above 500 mA (Io), characteristic of SiC Schottky technology, making it ideal for high-frequency switching applications. Its capacitance at 1V and 1MHz is 380pF. The diode is housed in a PG-TO220-2-2 package, suitable for through-hole mounting, and operates within a junction temperature range of -55°C to 175°C. This component is utilized in power factor correction, solar inverters, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 7.5A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 7.5 A |
| Current - Reverse Leakage @ Vr | 180 µA @ 1200 V |
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