IDH08G65C5XKSA1
DIODE SIL CARB 650V 8A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ diode, part number IDH08G65C5XKSA1, is a 650V, 8A silicon carbide Schottky diode offered in a TO-220-2-2 package. This through-hole component exhibits a maximum forward voltage (Vf) of 1.7V at 8A and a minimal reverse leakage current of 280 µA at 650V. Its key characteristic is zero reverse recovery time for currents exceeding 500mA (Io), enabling significant efficiency gains. The diode operates across a junction temperature range of -55°C to 175°C and features a capacitance of 250pF at 1V and 1MHz. This device is well-suited for applications in power factor correction, inverters, and electric vehicle charging systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 280 µA @ 650 V |
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