IDH06S60CAKSA1
DIODE SIL CARB 600V 6A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' IDH06S60CAKSA1 is a 600V, 6A Silicon Carbide (SiC) Schottky diode. Part of the CoolSiC™+ series, this device features a low forward voltage of 1.7V at 6A and a reverse leakage of 80µA at 600V. Its key characteristic is a zero reverse recovery time, ensuring high efficiency in switching applications. The capacitance at 1V and 1MHz is 280pF. Designed for through-hole mounting, it is supplied in a PG-TO220-2-2 package. This diode is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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