IDH06G65C5XKSA1
DIODE SIL CARB 650V 6A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDH06G65C5XKSA1, is a 650V, 6A Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component, housed in a PG-TO220-2-2 package, offers a low forward voltage of 1.7V at 6A and a minimal reverse leakage current of 210 µA at 650V. Notably, it features zero reverse recovery time for currents greater than 500mA, contributing to increased efficiency and reduced switching losses. The device operates across a broad temperature range from -55°C to 175°C. Common applications include power factor correction, electric vehicle charging, and industrial power supplies. Capacitance is specified at 190pF at 1V and 1MHz.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 210 µA @ 650 V |
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