IDH05S60CAKSA1
DIODE SIL CARB 600V 5A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ DIODE SIL CARB 600V 5A TO220-2-2, part number IDH05S60CAKSA1, is a Silicon Carbide Schottky diode designed for high-performance power applications. With a maximum DC reverse voltage of 600 V and an average rectified current capability of 5 A, this component offers a forward voltage drop of 1.7 V at 5 A. Its key characteristic is zero reverse recovery time (trr), enabling faster switching speeds and reduced switching losses. The diode exhibits a low reverse leakage current of 70 µA at 600 V and a capacitance of 240 pF at 1 V and 1 MHz. Packaged in a PG-TO220-2-2 through-hole configuration, it operates reliably across a junction temperature range of -55°C to 175°C. This technology is well-suited for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 240pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 70 µA @ 600 V |
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