IDH05G65C5XKSA2
DIODE SIL CARB 650V 5A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Schottky Diode, part number IDH05G65C5XKSA2, offers a 650 V reverse voltage rating and a maximum forward voltage of 1.7 V at 5 A. This SiC Schottky diode features a low reverse leakage current of 90 µA at 650 V and a capacitance of 160 pF at 1 V and 1 MHz. Designed for through-hole mounting, it comes in a PG-TO220-2 package. The diode exhibits no significant reverse recovery time above 500 mA, making it suitable for high-frequency applications. Operating junction temperatures range from -55°C to 175°C. This component is utilized in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 160pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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