IDH04SG60CXKSA1
DIODE SIL CARB 600V 4A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH04SG60CXKSA1 is a 600V, 4A Silicon Carbide Schottky diode. This through-hole component features a PG-TO220-2-2 package and offers an average rectified forward current (Io) of 4A. Key specifications include a maximum forward voltage (Vf) of 2.3V at 4A and a low reverse leakage current of 25 µA at 600V. The device exhibits a capacitance of 80pF at 1V and 1MHz, and a reverse recovery time (trr) of 0 ns, indicating no recovery time above 500mA. It operates across a junction temperature range of -55°C to 175°C. This SiC technology is utilized in applications such as power factor correction and switch-mode power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 80pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 4 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
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