IDH04S60CAKSA1
DIODE SIL CARB 600V 4A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH04S60CAKSA1 is a Silicon Carbide Schottky diode designed for demanding power applications. This component features a 600V reverse voltage rating (Vr) and an average rectified current capability of 4A (Io). With a low forward voltage drop of 1.9V at 4A (If) and a typical leakage current of 50 µA at 600V, it offers exceptional efficiency. The diode exhibits zero reverse recovery time (trr) for currents greater than 500mA, a characteristic of its advanced SiC Schottky technology. It is housed in a PG-TO220-2-2 package suitable for through-hole mounting and operates across a junction temperature range of -55°C to 175°C. The IDH04S60CAKSA1 is commonly utilized in industrial power supplies, electric vehicle charging, and renewable energy systems. Capacitance is specified at 130pF at 1V and 1MHz.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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