IDH04G65C5XKSA1
DIODE SIL CARB 650V 4A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDH04G65C5XKSA1 is a 650V, 4A Silicon Carbide Schottky diode. This through-hole component, housed in a TO-220-2-2 package, offers advanced performance characteristics essential for demanding power applications. Key specifications include a forward voltage (Vf) of 1.7V at 4A and a reverse leakage current of 140 µA at its maximum reverse voltage of 650V. Notably, this diode exhibits zero reverse recovery time (trr) for currents exceeding 500mA (Io), marking a significant advantage for high-frequency switching. The junction operating temperature range is from -55°C to 175°C. This device is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 140 µA @ 650 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
