IDH03SG60CXKSA2
DIODE SIL CARB 600V 3A TO220-2-1Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ series diode, part number IDH03SG60CXKSA2, offers a 600 V reverse voltage rating and a 3 A forward current capability. This Silicon Carbide Schottky diode features a low forward voltage of 2.3 V at 3 A and exhibits no reverse recovery time above 500 mA, contributing to high efficiency in power conversion. The device is packaged in a TO-220-2-1 (PG-TO220-2-1) through-hole configuration, suitable for demanding applications. Its operating junction temperature range is -55°C to 175°C. This component is commonly utilized in power supplies, motor drives, and industrial automation systems where high performance and reliability are critical. The capacitance at 1V and 1MHz is 60pF, with a reverse leakage of 15 µA at 600 V.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 600 V |
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