IDH03SG60CXKSA1
DIODE SIL CARB 600V 3A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode IDH03SG60CXKSA1 is a 600V, 3A Silicon Carbide Schottky diode. This through-hole component, housed in a PG-TO220-2-2 package, offers exceptional performance with a maximum forward voltage (Vf) of 2.3V at 3A and a minimal reverse leakage current of 15 µA at 600V. Engineered with SiC technology, it features zero reverse recovery time (trr) for currents exceeding 500mA, enabling higher switching frequencies and improved efficiency. The device operates across a junction temperature range of -55°C to 175°C and has a capacitance of 60pF at 1V and 1MHz. This diode is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 600 V |
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