IDH03G65C5XKSA2
DIODE SIL CARB 650V 3A TO220-2-1Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ DIODE SIL CARB 650V 3A TO220-2-1, part number IDH03G65C5XKSA2, is a high-performance Schottky diode utilizing Silicon Carbide technology. This component offers a maximum DC reverse voltage of 650 V and a typical forward voltage drop of 1.7 V at 3 A. It features an average rectified forward current capability of 3 A. Notably, the device exhibits no reverse recovery time for currents over 500 mA, contributing to enhanced efficiency in demanding applications. The diode's operating junction temperature range is from -55°C to 175°C, and it is housed in a standard TO-220-2 package for through-hole mounting. Typical applications for this type of device include power factor correction, solar inverters, and electric vehicle charging systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 100pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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