IDH02SG120XKSA1
DIODE SIL CARB 1.2KV 2A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH02SG120XKSA1 is a Silicon Carbide Schottky diode designed for high-performance power conversion applications. This through-hole component features a 1200V reverse voltage rating and a continuous forward current capability of 2A. The device exhibits a low forward voltage drop of 1.8V at 2A and a minimal reverse leakage current of 48 µA at 1200V. Notably, its Silicon Carbide technology delivers a zero reverse recovery time for currents above 500mA, significantly improving efficiency in switching applications. The diode boasts a junction operating temperature range of -55°C to 175°C and is housed in a standard PG-TO220-2-2 package. Capacitance at 1V and 1MHz is specified at 125pF. This component finds application in demanding sectors such as industrial power supplies, electric vehicle charging infrastructure, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 125pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 48 µA @ 1200 V |
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