IDH02G65C5XKSA2
DIODE SIL CARB 650V 2A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDH02G65C5XKSA2, is a 650V, 2A silicon carbide Schottky diode. This through-hole component, housed in a PG-TO220-2 package, offers a forward voltage drop of 1.7V at 2A and exhibits no reverse recovery time above 500mA. Its typical capacitance at 1V and 1MHz is 70pF. The operating junction temperature range is -55°C to 175°C. This device is suitable for applications in power factor correction, power supplies, and electric vehicle charging, where high efficiency and performance are critical.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
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