IDDD12G65C6XTMA1
DIODE SIL CARB 650V 34A HDSOP-10Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDDD12G65C6XTMA1 is a 650V, 34A Silicon Carbide (SiC) Schottky diode, packaged in a PG-HDSOP-10-1 surface mount configuration. This device features an exceptionally fast switching speed with no measurable reverse recovery time above 500mA. It exhibits a low reverse leakage current of 40 µA at 420 V and a junction capacitance of 594pF at 1V and 1MHz. The diode operates across a junction temperature range of -55°C to 175°C. Its robust construction and high performance characteristics make it suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PowerSOP Module |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 594pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 34A |
| Supplier Device Package | PG-HDSOP-10-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 40 µA @ 420 V |
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