IDDD06G65C6XTMA1
DIODE SIL CARB 650V 18A HDSOP-10Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' IDDD06G65C6XTMA1 is a Silicon Carbide (SiC) Schottky diode from the CoolSiC™+ series. This component offers a 650V reverse voltage rating and an average rectified current capability of 18A. It features a surface mount design in the PG-HDSOP-10-1 package. The diode exhibits a low leakage current of 20 µA at 420V and a junction operating temperature range of -55°C to 175°C. Notably, it possesses no reverse recovery time for currents greater than 500mA (Io), contributing to high efficiency. The capacitance at 1V and 1MHz is 302pF. This device is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PowerSOP Module |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 302pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 18A |
| Supplier Device Package | PG-HDSOP-10-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 20 µA @ 420 V |
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