IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDDD04G65C6XTMA1 is a 650V Silicon Carbide Schottky diode. This device features a 13A average rectified forward current (Io) and a low reverse leakage of 14 µA at 420V. The capacitance at 1V, 1MHz is 205pF. Designed with a 'No Recovery Time' characteristic for currents greater than 500mA (Io), this diode is packaged in a PG-HDSOP-10-1, suitable for surface mount applications. The operating junction temperature range is -55°C to 175°C. This component is utilized in power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PowerSOP Module |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 205pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 13A |
| Supplier Device Package | PG-HDSOP-10-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 14 µA @ 420 V |
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