IDD12SG60CXTMA2
DIODE SIL CARB 600V 12A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDD12SG60CXTMA2 is a 600V, 12A Silicon Carbide Schottky diode. This surface mount component, housed in a PG-TO252-3 package, offers superior performance characteristics for demanding applications. It features a low forward voltage of 2.1V at 12A and exhibits no reverse recovery time above 500mA. The diode's junction capacitance is rated at 310pF at 1V and 1MHz, with a reverse leakage current of 100 µA at 600V. Operating across a temperature range of -55°C to 175°C, this device is suitable for power factor correction, inverter, and power supply applications in industries such as automotive and industrial automation. The component is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 12 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
