IDD12SG60CXTMA1
DIODE SIL CARB 600V 12A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDD12SG60CXTMA1 is a 600V, 12A Silicon Carbide Schottky diode in a PG-TO252-3 surface mount package. This component features an impressively low leakage current of 100 µA at 600V and a forward voltage drop of 2.1V at 12A. The diode exhibits zero reverse recovery time for currents greater than 500mA, enabling significantly higher switching frequencies and reduced switching losses. Its junction operating temperature range is -55°C to 175°C. The capacitance at 1V and 1MHz is 310pF. This device is ideal for applications in power factor correction, solar inverters, industrial power supplies, and electric vehicle charging infrastructure where high efficiency and performance are critical. Supplied in tape and reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 12 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
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