IDD10SG60CXTMA1
DIODE SIL CARB 600V 10A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDD10SG60CXTMA1 is a 600V, 10A Silicon Carbide Schottky diode. This surface mount component, housed in a PG-TO252-3 (DPAK) package, offers a forward voltage (Vf) of 2.1V at 10A and a reverse leakage current of 90 µA at 600V. Featuring zero reverse recovery time (trr), this diode is suitable for demanding applications requiring high efficiency and switching performance. Its operating junction temperature range is -55°C to 175°C. The capacitance at 1V and 1MHz is 290pF. This device is commonly utilized in power factor correction, switch-mode power supplies, and electric vehicle charging systems. Supplied in Tape & Reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 290pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 10 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 600 V |
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