IDD09SG60CXTMA1
DIODE SIL CARB 600V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Schottky diode, part number IDD09SG60CXTMA1, offers superior performance in a TO-252-3 (DPAK) surface-mount package. This SiC Schottky diode features a 600V reverse voltage rating and a 9A average rectified current capability. Its key characteristic is a zero reverse recovery time for currents greater than 500mA, significantly reducing switching losses. The forward voltage drop is a maximum of 2.1V at 9A, and the reverse leakage current is a minimal 80 µA at 600V. With a junction operating temperature range of -55°C to 175°C, this component is ideal for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 9 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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