IDD08SG60CXTMA1
DIODE SIL CARB 600V 8A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies presents the IDD08SG60CXTMA1, a CoolSiC™+ series Silicon Carbide (SiC) Schottky diode. This component features a 600V reverse voltage rating and an average rectified forward current capability of 8A. The forward voltage drop (Vf) is specified at a maximum of 2.1V at 8A. Engineered for high performance, this diode exhibits zero reverse recovery charge, contributing to its efficient switching characteristics. The device is housed in a PG-TO252-3 package, suitable for surface mounting. Typical applications include power factor correction (PFC) and inverter stages in industrial power supplies, electric vehicle charging, and solar inverters. Operating junction temperature range is -55°C to 175°C. The part is supplied in tape and reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 240pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 70 µA @ 600 V |
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