IDD06SG60CXTMA1
DIODE SIL CARB 600V 6A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Series Diode, part number IDD06SG60CXTMA1, offers a 600V DC reverse voltage capability with a maximum forward voltage of 2.3V at 6A. This Silicon Carbide Schottky diode features an average rectified current (Io) of 6A and a low reverse leakage of 50 µA at 600V. Designed for surface mount applications, it utilizes the PG-TO252-3 package. The component exhibits zero reverse recovery time for currents exceeding 500mA, contributing to enhanced switching efficiency. Operating junction temperatures range from -55°C to 175°C. This device is suitable for power supply, motor control, and industrial applications demanding high efficiency and performance.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 6 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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