IDD05SG60CXTMA2
DIODE SIL CARB 600V 5A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ series IDD05SG60CXTMA2 is a 600V, 5A Silicon Carbide Schottky diode. This surface mount component, housed in a PG-TO252-3 (DPAK) package, offers a maximum forward voltage (Vf) of 2.3V at 5A. Engineered with SiC technology, it exhibits no reverse recovery time above 500mA (Io). The diode features a low reverse leakage current of 30 µA at 600V and a capacitance of 110pF at 1V measured at 1MHz. Operating across a junction temperature range of -55°C to 175°C, this device is suitable for applications in power supplies, industrial motor drives, and renewable energy systems. The IDD05SG60CXTMA2 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 110pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 5 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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