IDD05SG60CXTMA1
DIODE SIL CARB 600V 5A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Series IDD05SG60CXTMA1 is a 600V, 5A Silicon Carbide Schottky diode. This device offers a low forward voltage of 2.3V at 5A and a reverse leakage current of 30µA at 600V. Featuring a zero reverse recovery time, it is suitable for demanding applications requiring high efficiency and switching speed. The diode has a junction capacitance of 110pF at 1V. Packaged in a PG-TO252-3 (DPAK) surface mount configuration, it operates across a temperature range of -55°C to 175°C. This component is utilized in power supply units, electric vehicle charging, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 110pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 5 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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