IDD04SG60CXTMA1
DIODE SIC 600V 5.6A TO252-31Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ DIODE SIC 600V 5.6A TO252-3-11, part number IDD04SG60CXTMA1, is a Silicon Carbide Schottky diode designed for high-performance applications. This surface mount component, housed in a PG-TO252-3-11 package, offers a 600V reverse voltage rating and an average rectified forward current capability of 5.6A. It features a low forward voltage drop of 2.3V at 4A and exhibits a minimal reverse leakage current of 25 µA at 600V. Notably, this device boasts zero reverse recovery time, enabling faster switching speeds and reduced switching losses, crucial for power factor correction, switch-mode power supplies, and solar inverters. The operating junction temperature range is -55°C to 175°C, and it is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 80pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5.6A |
| Supplier Device Package | PG-TO252-3-11 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 4 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
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