IDD03SG60CXTMA1
DIODE SIL CARB 600V 3A TO252-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ diode, part number IDD03SG60CXTMA1. This Silicon Carbide Schottky diode offers a 600V reverse voltage and 3A forward current. Featuring a low forward voltage of 2.3V at 3A and a minimal reverse leakage of 15 µA at 600V, this component exhibits zero reverse recovery time for currents exceeding 500mA. The device is housed in a TO-252-3 (DPAK) surface-mount package, supplied on tape and reel. Its robust construction supports an operating junction temperature range of -55°C to 175°C. This diode is suitable for applications in power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 600 V |
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