IDC73D120T6MX1SA2
DIODE GP 1.2KV 150A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDC73D120T6MX1SA2 is a general-purpose diode designed for demanding applications requiring high voltage and current handling. This component features a 1200 V reverse voltage rating and a 150 A average rectified forward current (Io). The forward voltage drop (Vf) is a maximum of 2.05 V at 150 A. With a reverse leakage current of only 26 µA at 1200 V, it exhibits excellent blocking characteristics. The device operates across a junction temperature range of -40°C to 175°C and utilizes standard recovery technology with a typical speed greater than 500 ns. The IDC73D120T6MX1SA2 is supplied as a wafer, sawn on foil, for surface mount integration. This diode is commonly employed in power conversion systems, industrial motor drives, and renewable energy applications where robust performance is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 150A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.05 V @ 150 A |
| Current - Reverse Leakage @ Vr | 26 µA @ 1200 V |
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