IDC40D120T6MX1SA4
DIODE GP 1.2KV 75A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' IDC40D120T6MX1SA4 is a standard recovery diode designed for high-voltage, high-current applications. This component features a maximum DC reverse voltage of 1200 V and an average rectified forward current capability of 75 A. The forward voltage drop at 75 A is specified at a maximum of 2.05 V, with a low reverse leakage current of 14 µA at 1200 V. Operating across a junction temperature range of -40°C to 175°C, this device is supplied as a die, sawn on foil, facilitating efficient surface mount integration. Its standard recovery speed, exceeding 500 ns with an Io of over 200 mA, makes it suitable for power conversion and control systems across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 75A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.05 V @ 75 A |
| Current - Reverse Leakage @ Vr | 14 µA @ 1200 V |
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