IDC28D120T6MX1SA2
DIODE GP 1.2KV 50A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' IDC28D120T6MX1SA2 is a high-voltage general-purpose diode designed for demanding applications. This wafer-level component offers a 1200 V reverse voltage capability with a maximum forward voltage drop of 2.05 V at 50 A. The diode features a substantial average rectified current handling capacity of 50 A and a low reverse leakage current of 10 µA at its maximum reverse voltage. Operating across a junction temperature range of -40°C to 175°C, it utilizes standard recovery technology with a speed specification of >500 ns. The component is supplied as a die, sawn on foil, suitable for surface mount applications. This device finds utility in power electronics, industrial motor control, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.05 V @ 50 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
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