IDC10D120T6MX1SA1
DIODE GP 1.2KV 15A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies, a leading provider of advanced semiconductor solutions, offers the IDC10D120T6MX1SA1, a high-performance general-purpose diode. This component features a robust 1200 V reverse voltage rating and a substantial 15 A average rectified current capability, making it suitable for demanding power applications. The forward voltage drop is specified at a maximum of 2.05 V at 15 A, ensuring efficient operation. Engineered for surface mount applications, this diode is supplied as a die, sawn on foil, facilitating integration into compact designs. With an operating junction temperature range of -40°C to 175°C and a standard recovery time exceeding 500 ns, the IDC10D120T6MX1SA1 is ideal for use in industrial power supplies, automotive electronics, and renewable energy systems where reliability and performance are paramount. The minimal reverse leakage current of 3.5 µA at 1200 V further enhances its suitability for high-voltage DC blocking applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.05 V @ 15 A |
| Current - Reverse Leakage @ Vr | 3.5 µA @ 1200 V |
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