IDB30E60ATMA1
DIODE GP 600V 52.3A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDB30E60ATMA1 is a 600V, 52.3A General Purpose Diode featuring a fast recovery time of 126 ns. This surface mount component, housed in a PG-TO263-3-2 package, offers a maximum forward voltage of 2V at 30A and a low reverse leakage of 50 µA at 600V. Its operating junction temperature range is -40°C to 175°C. The device is supplied in Tape & Reel (TR) packaging. This diode is suitable for applications in the automotive and industrial sectors requiring high voltage and current handling with efficient switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 126 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 52.3A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 30 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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