IDB18E120ATMA1
DIODE GEN PURP 1.2KV 31A TO263-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDB18E120ATMA1 is a general-purpose diode designed for demanding applications. This component offers a 1200 V reverse voltage (Vr) and a 31 A average rectified forward current (Io). Featuring a forward voltage drop (Vf) of 2.15 V at 18 A and a reverse leakage current of 100 µA at 1200 V, it is engineered for efficiency. The diode exhibits a reverse recovery time (trr) of 195 ns, classifying it as a fast recovery diode. Encased in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount package, it operates across a junction temperature range of -55°C to 150°C. This device is suitable for power supply, motor control, and industrial automation sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 195 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 31A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V @ 18 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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