IDB15E60ATMA1
DIODE GP 600V 29.2A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDB15E60ATMA1 is a fast-recovery diode designed for high-voltage applications. This component features a 600 V reverse voltage rating and an average rectified forward current capability of 29.2 A. The forward voltage drop is specified at 2 V maximum at 15 A. With a reverse leakage current of 50 µA at 600 V, it offers efficient operation. The diode exhibits a reverse recovery time (trr) of 87 ns, classifying it as a fast-recovery device suitable for switching frequencies up to 500 ns. Housed in a surface-mount PG-TO263-3-2 package (TO-263-3, D2PAK), it operates across a junction temperature range of -40°C to 175°C. This Infineon Technologies diode is commonly utilized in power supply units, motor control, and lighting applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 87 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 29.2A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 15 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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