IDB12E120ATMA1
DIODE GP 1.2KV 28A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDB12E120ATMA1 is a general-purpose diode featuring a 1200V reverse voltage rating and 28A average rectified current. This component utilizes standard technology and offers a fast recovery time of 150ns. The forward voltage drop is 2.15V at 12A, with a reverse leakage of 100 µA at 1200V. Housed in a PG-TO263-3-2 surface mount package, it operates within a junction temperature range of -55°C to 150°C. This diode is suitable for applications in power supply, motor control, and renewable energy systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 28A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V @ 12 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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