IDB10S60CATMA2
DIODE SIL CARB 600V 10A TO263-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies presents the IDB10S60CATMA2, a CoolSiC™+ series Silicon Carbide Schottky diode. This component features a 600V reverse voltage rating and a 10A average rectified forward current. Its low forward voltage drop of 1.7V at 10A, coupled with a zero reverse recovery time, makes it highly efficient. Designed for surface mount applications, it is housed in a PG-TO263-3-2 package. The device operates across a junction temperature range of -55°C to 175°C and exhibits a low leakage current of 140 µA at 600V. Typical applications include power factor correction, converters, and inverters across various industrial and automotive sectors.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 480pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 140 µA @ 600 V |
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