IDB10S60C
DIODE SIL CARB 600V 10A TO263-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDB10S60C is a 600V, 10A Silicon Carbide Schottky diode, housed in a PG-TO263-3-2 surface mount package. This diode features a maximum forward voltage (Vf) of 1.7V at 10A and exhibits virtually zero reverse recovery time for currents exceeding 500mA (Io). With a low reverse leakage current of 140 µA at 600V and a junction operating temperature range of -55°C to 175°C, it offers robust performance. The component capacitance is 480pF at 1V and 1MHz. This device is suitable for applications in power factor correction, photovoltaic inverters, and industrial power supplies. The component is supplied on Tape & Reel (TR).
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 480pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 140 µA @ 600 V |
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