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IDB09E60ATMA1

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IDB09E60ATMA1

DIODE GP 600V 19.3A TO263-3-2

Manufacturer: Infineon Technologies

Categories: Single Diodes

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Infineon Technologies' IDB09E60ATMA1 is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a PG-TO263-3-2 package, offers a 600V reverse voltage rating and a substantial 19.3A average rectified current capability. Its fast recovery time of 75 ns, coupled with a forward voltage of 2V at 9A, makes it suitable for power switching circuits. The diode exhibits a reverse leakage current of 50 µA at its maximum reverse voltage. Operating across a junction temperature range of -55°C to 175°C, this device finds application in power supplies, motor control, and industrial automation. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)19.3A
Supplier Device PackagePG-TO263-3-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2 V @ 9 A
Current - Reverse Leakage @ Vr50 µA @ 600 V

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