IDB06S60C
DIODE SIL CARB 600V 6A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDB06S60C, is a 600V, 6A Silicon Carbide (SiC) Schottky diode. This component features a low forward voltage drop of 1.7V at 6A and a reverse leakage current of 80 µA at 600V. The IDB06S60C is designed with no reverse recovery time above 500mA, offering enhanced switching performance. Its capacitance is rated at 280pF at 1V and 1MHz. The diode is housed in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount package, suitable for demanding applications. Operating junction temperatures range from -55°C to 175°C. This SiC diode is utilized in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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