D711N65TXPSA1
DIODE GEN PURP 6.5KV 1070AManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies D711N65TXPSA1 is a general-purpose diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 6500 V and a substantial average rectified forward current (Io) of 1070A. The forward voltage drop (Vf) is specified as a maximum of 1.9 V at 1200 A. The diode exhibits a standard recovery speed, with a typical time greater than 500 ns for speeds > 200mA (Io). Reverse leakage current is rated at 50 mA at 6500 V. The D711N65TXPSA1 employs a clamp-on mounting type and is housed in a DO-200AB, B-PUK package. Operating junction temperatures range from -40°C to 160°C. This diode is suitable for use in power transmission, industrial motor drives, and high-voltage DC (HVDC) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | DO-200AB, B-PUK |
| Mounting Type | Clamp On |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1070A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 160°C |
| Voltage - DC Reverse (Vr) (Max) | 6500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 1200 A |
| Current - Reverse Leakage @ Vr | 50 mA @ 6500 V |
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