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D711N60TXPSA1

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D711N60TXPSA1

DIODE GEN PURP 6KV 1070A

Manufacturer: Infineon Technologies

Categories: Single Diodes

Quality Control: Learn More

Infineon Technologies D711N60TXPSA1 is a high-voltage, high-current general-purpose diode. This component features a maximum DC reverse voltage (Vr) of 6000 V and an average rectified forward current (Io) of 1070A. The forward voltage (Vf) is specified at 1.9 V at 1200 A. Designed for demanding applications, it offers a reverse leakage current of 50 mA at 6000 V and operates within a junction temperature range of -40°C to 160°C. The diode utilizes a standard recovery speed, exceeding 500 ns for currents greater than 200 mA. Its mounting type is clamp-on, and it is housed in a DO-200AB, B-PUK package. This component is commonly found in power electronics, industrial motor control, and high-voltage power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseDO-200AB, B-PUK
Mounting TypeClamp On
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1070A
Supplier Device Package-
Operating Temperature - Junction-40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max)6000 V
Voltage - Forward (Vf) (Max) @ If1.9 V @ 1200 A
Current - Reverse Leakage @ Vr50 mA @ 6000 V

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