D650S12TXPSA1
DIODE GEN PURP 1.2KV 620AManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies D650S12TXPSA1 is a general-purpose diode with a maximum reverse voltage of 1200 V and an average rectified current capability of 620 A. This component features a standard recovery time of 5.3 µs, classifying it within the Standard Recovery >500ns category. The forward voltage drop at a high forward current of 1200 A is 2.25 V. It exhibits a reverse leakage current of 20 mA at its maximum reverse voltage. The D650S12TXPSA1 is designed for clamp-on mounting within the DO-200AB, B-PUK package. Operating temperatures range from -40°C to 150°C. This component is suitable for applications in power electronics, industrial motor control, and high-power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-200AB, B-PUK |
| Mounting Type | Clamp On |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5.3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 620A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.25 V @ 1200 A |
| Current - Reverse Leakage @ Vr | 20 mA @ 1200 V |
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