D2601NH90TXPSA1
DIODE GEN PURP 9KV 1790AManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies D2601NH90TXPSA1 is a high-voltage, high-current general-purpose diode designed for demanding applications. This chassis mount device offers a maximum repetitive reverse voltage (Vr) of 9000 V and an average rectified forward current (Io) of 1790 A. The forward voltage drop (Vf) is rated at 5.5 V at a forward current (If) of 4000 A. The diode exhibits a reverse leakage current of 150 mA at its maximum reverse voltage. With a standard recovery time exceeding 500 ns and a junction operating temperature range of 0°C to 140°C, this component is suitable for power conversion, motor control, and industrial power supply applications. It is supplied in a DO-200AE package and is available in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | DO-200AE |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1790A |
| Supplier Device Package | - |
| Operating Temperature - Junction | 0°C ~ 140°C |
| Voltage - DC Reverse (Vr) (Max) | 9000 V |
| Voltage - Forward (Vf) (Max) @ If | 5.5 V @ 4000 A |
| Current - Reverse Leakage @ Vr | 150 mA @ 9000 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
