D2201N45TXPSA1
DIODE GEN PURP 4.5KV 3250AManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies D2201N45TXPSA1 is a high-voltage, high-current general-purpose diode designed for demanding power applications. This chassis mount component offers a maximum DC reverse voltage of 4500 V and a continuous average rectified current capability of 3250 A. It features a standard recovery speed, exceeding 500 ns with an Io of greater than 200 mA, and a forward voltage drop of 1.2 V at 2500 A. The diode exhibits a low reverse leakage current of 100 mA at 4500 V and operates across a junction temperature range of -40°C to 140°C. This robust diode is suitable for power conversion and control systems within industries such as industrial automation, power generation, and electric vehicle charging. The Infineon Technologies D2201N45TXPSA1 is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | DO-200AD |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3250A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 140°C |
| Voltage - DC Reverse (Vr) (Max) | 4500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 2500 A |
| Current - Reverse Leakage @ Vr | 100 mA @ 4500 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
