D1131SH65TXPSA1
DIODE GEN PURP 6.5KV 1100AManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies D1131SH65TXPSA1 is a high-voltage, high-current general-purpose diode. This component features a maximum DC reverse voltage (Vr) of 6500 V and a maximum forward voltage (Vf) of 5.6 V at 2500 A. It offers a substantial average rectified current (Io) of 1100A and a reverse leakage current of 150 mA at 6500 V. Designed for robustness, it is housed in a DO-200AE package for chassis mounting. The diode operates within a junction temperature range of 0°C to 140°C and utilizes standard recovery technology with a speed specification of >500ns at >200mA (Io). This component is typically employed in power conversion and control applications within industrial and high-power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | DO-200AE |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1100A |
| Supplier Device Package | - |
| Operating Temperature - Junction | 0°C ~ 140°C |
| Voltage - DC Reverse (Vr) (Max) | 6500 V |
| Voltage - Forward (Vf) (Max) @ If | 5.6 V @ 2500 A |
| Current - Reverse Leakage @ Vr | 150 mA @ 6500 V |
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