D1050N12TXPSA1
DIODE GEN PURP 1.2KV 1050AManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies D1050N12TXPSA1 is a General Purpose Diode with a maximum DC reverse voltage of 1200 V. This component features an average rectified current (Io) of 1050 A and a forward voltage (Vf) of 1 V at 1000 A. The reverse leakage current is specified at 60 mA at 1200 V. Designed for high-power applications, it utilizes a clamp-on mounting type within a DO-200AB, B-PUK package. The operating junction temperature ranges from -40°C to 180°C. This diode offers standard recovery speed exceeding 500 ns and is supplied in bulk packaging. It finds application in demanding industrial sectors that require robust power handling capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-200AB, B-PUK |
| Mounting Type | Clamp On |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1050A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 180°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1000 A |
| Current - Reverse Leakage @ Vr | 60 mA @ 1200 V |
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