BAS4002S02LRHE6327XTSA1
DIODE SCHOTT 40V 200MA TSLP-2-17Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies BAS4002S02LRHE6327XTSA1 is a Schottky diode designed for high-frequency switching applications. This component features a reverse voltage rating of 40V and a forward current of 200mA, with a low forward voltage drop of 550mV at 200mA. Its low leakage current is 10µA at 40V, and it exhibits a capacitance of 12pF at 5V and 1MHz. The device is housed in a compact PG-TSLP-2-17 package, suitable for surface mounting in space-constrained designs. Operating across a junction temperature range of -55°C to 150°C, this diode is commonly utilized in power management, signal routing, and battery charging circuits across various electronic industries. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 12pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | PG-TSLP-2-17 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 200 mA |
| Current - Reverse Leakage @ Vr | 10 µA @ 40 V |
Request a Quote
Clients Also Buy
D126A45CXPSA1
DIODE GEN PURP 4.5KV 200A
BAS1602WH6327XTSA1
DIODE GEN PURP 80V 200MA SCD-80
IDK09G65C5XTMA2
DIODE SIL CARB 650V 9A TO263-2
